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00AXI 03DRL TE5544N H2106A01 B7220 74AC3 SA101 934512
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  Datasheet File OCR Text:
 SMD Type
NPN Silicon Epitaxial Transistor BSP19A
SOT-223
6.50
+0.2 -0.2
Transistors
Unit: mm
+0.2 3.50-0.2
0.1max +0.05 0.90-0.05
Features
High Voltage: V(BR)CEO of 250 and 350 Volts. Available in 12 mm Tape and Reel
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1 Base
1 2 2.9 4.6 3
+0.1 0.70-0.1
2 Collector 3 Emitter 4 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25 * Derate above 25 Storage Temperature Range Junction Temperature Thermal Resistance from Junction-to-Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath Tstg TJ ReJA TL Symbol VCEO VCBO VEBO IC PD Rating 350 400 5 1000 0.8 6.4 -65 to 150 150 156 260 10 Sec /W Unit V V V mA Watts mW/
* Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
Electrical Characteristics Ta = 25
Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain * Current-Gain -- Bandwidth Product * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * * Pulse Test: Pulse Width Symbol V(BR)CEO ICBO IEBO hFE fT VCE(sat) VBE(sat) Testconditons IC = 1.0 mA, IB = 0 VCB = 400 V, IE = 0 VEB = 5.0 V, IC = 0 IC = 20 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, f = 5.0 MHz IC = 50 mA, IB = 4.0 mA IC = 50 mA, IB = 4.0 mA 40 70 0.5 1.3 MHz V V Min 350 20 10 Typ Max Unit V nA mA
300 is, Duty Cycle = 2.0%
Marking
Marking SP19A
+0.15 1.65-0.15
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